In the semiconductor industry,performance expansion has always been the core driving force to promote technological progress.With the rapid development of emerging fields such as artificial intelligence,5G,cloud computing and automotive electronics,the market has put forward higher requirements for the bandwidth,power consumption,size and reliability of memory.Heterogeneous integration technology is becoming the key path to break through the performance bottleneck,and DRAM,as an indispensable part of it,is welcoming new design and application changes.
 

As a semiconductor supplier with both storage and logic design capabilities,Etron Technology has launched a number of innovative DRAM products for a variety of terminal scenarios.Among them,in view of the strict requirements of AI edge devices and IOT terminals for high bandwidth,small size and low power consumption,Etron took the lead in launching the world's first DRAM with fan-in wafer-level packaging-RPC DRAM.While ensuring high-bandwidth data transmission,the product greatly reduces the package size,which is very suitable for wearable devices,miniature AI cameras and other application scenarios that are extremely sensitive to space and energy consumption.
 

In addition to RPC DRAM®,Etron has also developed high-bandwidth DRAM with long data retention time for AI edge computing devices.By using different types of high-bandwidth memory(HBM),the data transmission rate covers a wide range from 10GB/s to 400GB/s,which can match the continuous growth demand of the current mainstream and next-generation AI SoC for computing throughput.At the same time,Etron can also provide a one-stop solution to integrate controller and DRAM according to the specific needs of customers,reducing the complexity of system design.
 

As an authorized agent of Etron,we provide various types of DRAM products,which can match a complete storage solution for you.Please feel free to contact us if you need further information on technical parameters or selection suggestions.